? semiconductor components industries, llc, 2009 october, 2009 ? rev. 5 1 publication order number: mbt3946dw1t1/d mbt3946dw1t1g dual general purpose transistor the mbt3946dw1t1g device is a spin ? off of our popular sot ? 23/sot ? 323 three ? leaded device. it is designed for general purpose amplifier applications and is housed in the sot ? 363 ? 6 surface mount package. by putting two discrete devices in one package, this device is ideal for low ? power surface mount applications where board space is at a premium. features ? h fe , 100 ? 300 ? low v ce(sat) , 0.4 v ? simplifies circuit design ? reduces board space ? reduces component count ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ? emitter voltage (npn) (pnp) v ceo 40 ? 40 vdc collector ? base voltage (npn) (pnp) v cbo 60 ? 40 vdc emitter ? base voltage (npn) (pnp) v ebo 6.0 ? 5.0 vdc collector current ? continuous (npn) (pnp) i c 200 ? 200 madc electrostatic discharge esd hbm class 2 mm class b thermal characteristics characteristic symbol max unit total package dissipation (note 1) t a = 25 c p d 150 mw thermal resistance, junction ? to ? ambient r ja 833 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. device mounted on fr4 glass epoxy printed circuit board using the minimum recommended footprint. sot ? 363 ? 6/sc ? 88 case 419b style 1 q 1 (1) (2) (3) (4) (5) (6) q 2 mbt3946dw1t1* *q1 pnp q2 npn http://onsemi.com 46 m 46 = specific device code m = date code = pb ? free package marking diagram device package shipping ? ordering information sc ? 88 (pb ? free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 3000 / tape & reel 3000 / tape & reel sc ? 88 (pb ? free) mbt3946dw1t1g MBT3946DW1T2G (note: microdot may be in either location) 1
mbt3946dw1t1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 2) (i c = 1.0 madc, i b = 0) (npn) (i c = ? 1.0 madc, i b = 0) (pnp) v (br)ceo 40 ? 40 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) (npn) (i c = ? 10 adc, i e = 0) (pnp) v (br)cbo 60 ? 40 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) (npn) (i e = ? 10 adc, i c = 0) (pnp) v (br)ebo 6.0 ? 5.0 ? ? vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) (npn) (v ce = ? 30 vdc, v eb = ? 3.0 vdc) (pnp) i bl ? ? 50 ? 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) (npn) (v ce = ? 30 vdc, v eb = ? 3.0 vdc) (pnp) i cex ? ? 50 ? 50 nadc on characteristics (note 2) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (npn) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) (i c = ? 0.1 madc, v ce = ? 1.0 vdc) (pnp) (i c = ? 1.0 madc, v ce = ? 1.0 vdc) (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 50 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 40 70 100 60 30 60 80 100 60 30 ? ? 300 ? ? ? ? 300 ? ? ? collector ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (npn) (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) (pnp) (i c = ? 50 madc, i b = ? 5.0 madc) v ce(sat) ? ? ? ? 0.2 0.3 ? 0.25 ? 0.4 vdc base ? emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (npn) (i c = 50 madc, i b = 5.0 madc) (i c = ? 10 madc, i b = ? 1.0 madc) (pnp) (i c = ? 50 madc, i b = ? 5.0 madc) v be(sat) 0.65 ? ? 0.65 ? 0.85 0.95 ? 0.85 ? 0.95 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) (npn) (i c = ? 10 madc, v ce = ? 20 vdc, f = 100 mhz) (pnp) f t 300 250 ? ? mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) (npn) (v cb = ? 5.0 vdc, i e = 0, f = 1.0 mhz) (pnp) c obo ? ? 4.0 4.5 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) (npn) (v eb = ? 0.5 vdc, i c = 0, f = 1.0 mhz) (pnp) c ibo ? ? 8.0 10.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h ie 1.0 2.0 10 12 k voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h re 0.5 0.1 8.0 10 x 10 ? 4 small ? signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h fe 100 100 400 400 ? 2. pulse test: pulse width 300 s; duty cycle 2.0%.
mbt3946dw1t1g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) (npn) (v ce = ? 10 vdc, i c = ? 1.0 madc, f = 1.0 khz) (pnp) h oe 1.0 3.0 40 60 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) (npn) (v ce = ? 5.0 vdc, i c = ? 100 adc, r s = 1.0 k , f = 1.0 khz) (pnp) nf ? ? 5.0 4.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc) (npn) (v cc = ? 3.0 vdc, v be = 0.5 vdc) (pnp) t d ? ? 35 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) (npn) (i c = ? 10 madc, i b1 = ? 1.0 madc) (pnp) t r ? ? 35 35 storage time (v cc = 3.0 vdc, i c = 10 madc) (npn) (v cc = ? 3.0 vdc, i c = ? 10 madc) (pnp) t s ? ? 200 225 ns fall time (i b1 = i b2 = 1.0 madc) (npn) (i b1 = i b2 = ? 1.0 madc) (pnp) t f ? ? 50 75 (npn) figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 3. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 4. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c (npn) (npn)
mbt3946dw1t1g http://onsemi.com 4 (npn) figure 5. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 figure 6. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 7. storage time i c , collector current (ma) figure 8. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 (npn) (npn) (npn) (npn) typical audio small ? signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 9. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 10. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a (npn) (npn)
mbt3946dw1t1g http://onsemi.com 5 (npn) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 11. current gain i c , collector current (ma) 70 100 200 300 50 figure 12. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 13. input impedance i c , collector current (ma) figure 14. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 (npn) (npn) (npn) (npn)
mbt3946dw1t1g http://onsemi.com 6 (npn) typical static characteristics figure 15. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c (npn) figure 16. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (npn) figure 17. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 18. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) (npn) (npn)
mbt3946dw1t1g http://onsemi.com 7 (pnp) figure 19. delay and rise time equivalent test circuit figure 20. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns +0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns +9.1 v 10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 21. capacitance reverse bias (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 22. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c (pnp) (pnp) figure 23. turn ? on time i c , collector current (ma) 70 100 200 300 500 50 time (ns) 1.0 2.0 3.0 10 20 70 5 100 figure 24. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t , fall time (ns) f v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v (pnp) (pnp)
mbt3946dw1t1g http://onsemi.com 8 (pnp) typical audio small ? signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 25. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 0.1 figure 26. r g , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resistance = 200 i c = 1.0 ma source resistance = 200 i c = 0.5 ma source resistance = 2.0 k i c = 100 a source resistance = 2.0 k i c = 50 a (pnp) (pnp) h parameters (v ce = ? 10 vdc, f = 1.0 khz, t a = 25 c) figure 27. current gain i c , collector current (ma) 70 100 200 300 50 figure 28. output admittance i c , collector current (ma) h , dc current gain h , output admittance ( mhos) figure 29. input impedance i c , collector current (ma) figure 30. voltage feedback ratio i c , collector current (ma) 30 100 50 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe 70 30 0.7 7.0 0.7 7.0 7.0 3.0 0.7 0.3 0.7 7.0 0.7 7.0 h , voltage feedback ratio (x 10 ) re -4 (pnp) (pnp) (pnp) (pnp)
mbt3946dw1t1g http://onsemi.com 9 (pnp) typical static characteristics figure 31. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c (pnp) figure 32. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma (pnp) figure 33. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 34. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat) , temperature coefficients (mv/ c) v (pnp) (pnp)
mbt3946dw1t1g http://onsemi.com 10 package dimensions sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mbt3946dw1t1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
